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| PD-97276 Rev A IRAM109-015SD Series Integrated Power Hybrid IC for Appliance Motor Drive Applications Description International Rectifier's IRAM109-015SD is a multi-chip Hybrid IC developed for low power appliance motor control applications such as Fans, Pumps, refrigerator compressors, etc. The compact Single in line (SIP-S) package minimizes PCB space. Several built-in protection features such as temperature feedback, shoot through prevention, under voltage lockout, and shutdown input makes this a very robust solution. The internal shunt resistor saves board space and provides clean current feedback. The combination of highly efficient high voltage MOSFETs, the industry benchmark Half-Bridge HVIC driver (3.3V/5V input compatible) and thermally enhanced package makes this a highly competitive solution. The bootstrapped power supplies for the high side drivers can be generated using internal bootstrap diodes eliminating the need for isolated power supplies. This feature reduces the component count, board space, and cost of the system. H-Bridge 1A, 500V Features * * * * * * * * * * Motor Power range 60~250W / 85~253 Vac. Integrated Gate Drivers and Bootstrap Diodes. Shut-Down input turns off both channels. Under-voltage lockout for all switches. Matched propagation delay. Schmitt-triggered input logic. Cross-conduction prevention logic. Low di/dt switching for better noise immunity. Internal Current Shunt. Internal thermistor for temperature feedback. Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. VDSS Vbus Io @ TC=25C Io @ TC=100C Ipk @ TC=25C Pd TJ (MOSFET & IC) TC TSTG T MOSFET Blocking Voltage Positive DC Bus Input Voltage RMS Phase Current RMS Phase Current (Note 1) Maximum Peak Phase Current (tp<100s) Maximum Power dissipation per FET @ TC =25C Maximum Operating Junction Temperature Operating Case Temperature Range Storage Temperature Range Mounting torque Range (M3 screw) 500 400 2.0 1.0 5.0 18 +150 -20 to +100 -40 to +125 0.6 Nm C W A V V Note 1: Sinusoidal Modulation at V+=360V, TJ=150C, FPWM=20kHz, FMOD=50Hz, MI=0.8, PF=0.6, See Figure 5. www.irf.com 1 IRAM109-015SD Internal Electrical Schematic - IRAM109-015SD DB1 RB Q1 1 2 3 4 5 VCC IN SD DT Vss IC1 DB2 VB HO VS LO COM 10 9 8 7 6 RG2 Q2 RG1 1 2 3 4 5 VCC IN SD DT Vss IC2 VB HO VS LO COM 10 9 8 7 6 RG4 RG3 Q3 Q4 RD RS TH 1 2 3 4 5 6 7 8 11 12 15 16 19 2 www.irf.com IRAM109-015SD Absolute Maximum Ratings (Continued) Symbol BVR PBR Peak VS1,2,3 VB1,2,3 VDD Parameter Bootstrap Diode Reverse Breakdown Voltage Bootstrap Resistor Peak Power (Single Pulse) High side floating supply offset voltage High side floating supply voltage Low Side and logic fixed supply voltage Input voltage IN1, IN2 Min 600 --VB1,2,3 - 20 -0.3 -0.3 Max --25.0 VB1,2,3 +0.3 500 20 Lower of (VSS+15V) or VDD+0.3V Units Conditions V W V V V TJ = 25C, IR=1mA tP=100s, TC =100C VIN -0.3 V Electrical Characteristics (TJ= 25C Unless Otherwise Specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage Drain-to-Source On Resistance Drain-to-Source Leakage Current Diode Forward Voltage Drop Bootstrap Diode Forward Voltage Drop Bootstrap Resistor Value Bootstrap Resistor Tolerance Min 500 ----IDSS VFM VBDFM RBR RBR/RBR ------------Typ --2.2 5.5 10 0.87 0.70 --22 --Max --2.7 --100 1.1 --1.25 --5 % A V V Units Conditions V VIN=5V, ID=250A ID=1A, VDD=15V ID=1A, VDD=15V, TJ=150C VIN=5V, V+=500V IF=1A IF=1A, TJ=150C IF=1A TJ=25C TJ=25C RDS(ON) www.irf.com 3 IRAM109-015SD Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential. Symbol V + Definition Positive Bus Input Voltage High side floating supply voltage Low side and logic fixed supply voltage Logic input voltage (IN & SD) - Note 2 PWM Carrier Frequency Min --VS+10 10 VSS --- Typ --VS+15 15 --20 Max 360 VS+20 20 VDD --- Units V V V KHz VB1,2,3 VDD VIN Fp Note 2: Logic operational for Vs from COM-5V to COM+500V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details). Static Electrical Characteristics (TJ= 25C Unless Otherwise Specified) VBIAS (VDD, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all channels (Static Electrical Characteristics are Based on Driver IC Data Sheet). Symbol VDDUV+, VBSUV+ VDDUV-, VBSUVIQBS IQDD ILK Definition VDD and VBS supply undervoltage, Positive going threshold VDD and VBS supply undervoltage, Negative going threshold Quiescent VBS supply current Quiescent VDD supply current Offset Supply Leakage Current Min 8 7.4 20 0.4 --Typ 8.9 8.2 75 1 --Max 9.8 9 130 1.6 50 Units V V A mA A Dynamic Electrical Characteristics (TJ= 25C Unless Otherwise Specified) Symbol TON TOFF Parameter Input to Output propagation turnon delay time (see fig. 13a) Input to Output propagation turnoff delay time (see fig. 13b) Min ----Typ 2.4 570 Max ----Units Conditions s ID=1.5A, V+=360V ns Internal Current Sensing Resistor - Shunt Characteristics Symbol RShunt TCoeff TRange Parameter Resistance Temperature Coefficient Temperature Range Min 218 0 0 Typ 220 ----Max 222 200 125 Units Conditions m ppm/C C TC = 25C 4 www.irf.com IRAM109-015SD Thermal and Mechanical Characteristics Symbol Rth(J-C) Parameter Thermal resistance, per FET Min --Typ 5.1 Max 6.9 Units Conditions C/W Flat, Insulation Material Internal NTC - Thermistor Characteristics Parameter R25 R125 B Definition Resistance Resistance B-constant (25-50C) Min 97 2.25 4165 -40 --Typ 100 2.52 4250 --1.0 Max 103 2.80 4335 125 --Units Conditions k k k C mW/C TC = 25C TC = 25C TC = 125C R2 = R1e [B(1/T2 - 1/T1)] Temperature Range Typ. Dissipation constant Input-Output Logic Level Table SD 1 1 0 IN1,2 1 0 x VS1,2 V+ 0 Off www.irf.com 5 IRAM109-015SD Timing Parameter Definitions IN IN(LO) 50% 50% SD IN(HO) ton tr 90% toff 90% tf HO LO LO HO Figure 1. Input/Output Timing Diagram 10% 10% Figure 2. Switching Time Waveform Diagram IN (LO) 50% 50% 50% 50% IN IN (HO) 90% LO HO 10% HO LO DTLO-HO 10% DTHO-LO 90% MT 90% MT 10% MDT= DTLO-HO - DT HO-LO LO HO Figure 3. Deadtime Waveform Diagram Figure 4. Delay Matching Waveform Diagram 6 www.irf.com IRAM109-015SD Typical Application Connection - IRAM109-015SD Isense DCgnd VCC PO2 PO1 VSS VB2 IN1 IN2 SD 11 12 15 16 VB1 TH Application Circuit Recommendation 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and PO1,2-VB1,2 terminals, and the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1F, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044, or Figure 12. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with VCC (See maximum ratings Table on page 3). 4. The case of the module is connected to the negative DC Bus and is NOT Isolated. It is recommended to provide isolation material between case and heat sink to avoid electrical shock. www.irf.com 19 1 2 3 4 5 6 7 8 VBUS+ 7 IRAM109-015SD Module Pin-Out Description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Name IN1 IN2 VTH SD VDD VSS ISENSE VNA NA VS2 VB2 NA NA VS1 VB1 NA NA V+ Description Logic Input Gate Driver - Phase 1 Logic Input Gate Driver - Phase 2 Temperature Feedback Shun-down Function +15V Main Supply Negative Main Supply Current Feedback Negative Bus Input Voltage none none Output 2 - High Side Floating Supply Offset Voltage High Side Floating Supply voltage 2 none none Output 1 - High Side Floating Supply Offset Voltage High Side Floating Supply voltage 1 none none Positive Bus Input Voltage 1 19 8 www.irf.com IRAM109-015SD 1.6 Maximum Output Phase RMS Current - A 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz TC = 80C TC = 90C TC = 100C TJ = 150C Sinusoidal Modulation Figure 5. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=360V, TJ=150C, FMOD=50Hz, MI=0.8, PF=0.6 1.4 Maximum Output Phase RMS Current - A 1.2 1 0.8 0.6 0.4 0.2 0 1 10 Modulation Frequency - Hz 100 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz TJ = 150C Sinusoidal Modulation Figure 6. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=360V, TJ=150C, MI=0.8, PF=0.6 www.irf.com 9 IRAM109-015SD 30 25 Total Power Loss- W TJ = 150C Sinusoidal Modulation 20 15 10 IOUT = 1.2A IOUT = 1.0A IOUT = 0.8A 0 2 4 6 8 10 12 14 16 18 20 5 0 PWM Sw itching Frequency - kHz Figure 7. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=360V, TJ=150C, MI=0.8, PF=0.6 45 40 35 Total Power Loss - W 30 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Output Phase Current - ARMS FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz TJ = 150C Sinusoidal Modulation Figure 8. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=360V, TJ=150C, MI=0.8, PF=0.6 10 www.irf.com IRAM109-015SD 150 Max Allowable Case Temperature - C 125 100 TC is limited to 100C 75 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 50 25 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Output Phase Current - ARMS Figure 9. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=360V, TJ=150C, Modulation Depth=0.8, PF=0.6 160 TJ avg = 1.27 x TT herm + 3.09 MOSFET Junction Temperature - C 150 140 130 120 110 100 90 80 70 70 75 80 85 90 95 100 105 110 115 120 Internal Therm istor Tem perature Equivalent Read Out - C 115.8 Figure 10. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature www.irf.com 11 IRAM109-015SD 5.0 4.5 Thermistor Pin Read-Out Voltage - V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 TTHERM RTHERM TTHERM RTHERM TTHERM RTHERM C C C -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 4397119 3088599 2197225 1581881 1151037 846579 628988 471632 357012 272500 209710 162651 127080 25 30 35 40 45 50 55 60 65 70 75 80 85 100000 79222 63167 50677 40904 33195 27091 22224 18322 15184 12635 10566 8873 90 95 100 105 110 115 120 125 130 135 140 145 150 7481 6337 5384 4594 3934 3380 2916 2522 2190 1907 1665 1459 1282 Min Avg. Max 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Therm istor Tem perature - C Figure 11. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table. 11.0 10.0 Recommended Bootstrap Capacitor - F 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 5 10 PWM Frequency - kHz 15 20 10F 6.8F 4.7F 3.3F 2.2F 1.5F Figure 12. Recommended Bootstrap Capacitor Value vs. Switching Frequency 12 www.irf.com IRAM109-015SD Figure 13. Switching Parameter Definitions VDS 50% IN1/IN2 ID ID 90% ID VDS 90% ID 50% VDS 50% IN1/IN2 IN1 / IN2 IN1/IN2 50% VCE 10% ID 10% ID tr TON Figure 13a. Input to Output propagation turn-on delay time. TOFF tf Figure 13b. Input to Output propagation turn-off delay time. Figure 13c. Diode Reverse Recovery. www.irf.com 13 IRAM109-015SD Figure CT1. Switching Loss Circuit 14 www.irf.com IRAM109-015SD Package Outline IRAM109-015SD missing pin ; 9,10,13,14,17,18 note3 IRAM109-015SD note5 note2 note4 note1: Unit Tolerance is +0.4mm, Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Characters Font in this drawing differs from Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from Font shown on Module. note5: Non-Isolated Back Side. For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 7/2007 www.irf.com 15 |
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